Oscillator Strengths of the Si II 181 nanometer Resonance Multiplet

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Session 92 -- Dust and Gas in the ISM
Oral presentation, Friday, January 14, 10:15-11:45, Salon VI Room (Crystal Gateway)

[92.04] Oscillator Strengths of the Si II 181 nanometer Resonance Multiplet

S.D.Bergeson, J.E.Lawler (University of Wisconsin - Madison)

We report Si II experimental log(gf)-values of -2.38(4) for the 180.801 nm line, of -2.18(4) for the 181.693 nm line, and of -3.29(5) for the 181.745 nm line, where the number in parenthesis is the uncertainty in the last digit. The overall uncertainties (about 10 percent) include the one sigma random uncertainty (about 6 percent) and an estimate of the systematic uncertainty. The oscillator strengths are determined by combining branching fractions and radiative lifetimes. The branching fractions are measured using standard spectroradiometry on an optically thin source; the radiative lifetimes are measured using rime-resolved laser-induced fluorescence.

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