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C. Bebek (LBNL), C. Akerlof (Michigan), G. Aldering (LBNL), D. Amidei (Michigan), P. Astier (LPNHE), A. Baden (Maryland), L. Bergstrom (Stockholm), G. Bernstein, M. Campbell (Michigan), W. Carithers (LBNL), E. Commins, D. Curtis (Berkeley), S. Deustua, W. Edwards (LBNL), R. Ellis (Caltech), A. Fruchter (STSI), B. Frye (Princeton), J.F. Genat (LPNHE), G. Goldhaber (Berkeley), A. Goobar (Stockholm), J. Goodman (Maryland), J. Graham (Berkeley), D. Hardin (LPNHE), S. Harris, P. Harvey, H. Heetderks (Berkeley), S. Holland (LBNL), I. Hook (Edinburgh), D. Huterer (CWRU), D. Kasen, A. Kim (LBNL), R. Knop (Vanderbilt), R. Lafever (LBNL), M. Lampton (Berkeley), M. Levi (LBNL), D. Levin (Michigan), J-M. Levy (LPNHE), C. Lidman (ESO), R. Lin (Berkeley), E. Linder, S. Loken (LBNL), T. McKay, S. McKee (Michigan), M. Metzger (Caltech), R. Miquel (LBNL), A. Mourao (CENTRA), P. Nugent (LBNL), R. Pain (LPNHE), D. Pankow, C. Pennypacker (Berkeley), S. Perlmutter (LBNL), A. Refregier (Cambridge), J. Rich (CEA), K. Robinson (LBNL), K. Schahmaneche (LPNHE), M. Schubnell (Michigan), A. Spadafora, G. Smoot (Berkeley), G. Sullivan (Maryland), G. Tarle, A. Tomasch (Michigan), SNAP Collaboration
A key technology in the SNAP instrumentation is a large, one billion pixel camera with excellent sensitivity in the I and Z optical bands to maximize the discovery rate of high redshift supernovae. It is based on LBNL CCD and HgCdTe technologies. The camera is located in the one square degree field of view focal plane of a diffraction limited optic achieved with a 2-meter diameter, 3-mirror anastigmat telescope.
We describe the current status of the LBNL CCD technology as well as the design of the GigaCAM. The CCDs are fabricated on high-resistivity n-type silicon, are 200-300 microns thick, are operated fully depleted. The technology is proving to be very tolerant to operation in a space radiation environment. These CCDs are four-side abuttable, making them ideal for a wide-field mosaic. With back illumination, the QE at 900nm is > 90% (at T=150K). The HgCdTe devices are based on Rockwell's technology for NGST.
This research is supported by the Department of Energy Office of High Energy Physics, NSF AST and NASA.
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The author(s) of this abstract have provided an email address for comments about the abstract: cjbebek@lbl.gov