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H. M. Oluseyi, A. Karcher, J. H. Bercovitz, W. F. Kolbe, C. J. Bebek, M. E. Levi, S. E. Holland, M. Wagner, V. Prasad, S. I. Farid (Lawrence Berkeley National Laboratory)
The novel SNAP CCD is a backside illuminated, thick (200-300 micron), p-channel CCD constructed on high-resistivity n-type silicon. In previous papers we reported on SNAP CCD manufacture and research performance including transistor performance, quantum efficiency, radiation tolerance, and preliminary results on spatial resolution performance. Recently our CCD effort has moved from a research to a development mode as we prepare for full-scale production. Because of it's unique design many of the traditional approaches to CCD packaging and characterization cannot be utilized. In this talk we report on approaches and measurements unique to our backside illuminated operation mode: SNAP CCD 4-side buttable high precison packaging, charge collection and diffusion, charge transfer efficiency and low level behavior.
The author(s) of this abstract have provided an email address for comments about the abstract: HMOluseyi@lbl.gov
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Bulletin of the American Astronomical Society, 34, #4
© 2002. The American Astronomical Soceity.