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N.A. Roe (Lawrence Berkeley National Laboratory), SNAP Collaboration
Recent progress on the development of radiation-tolerant, red-sensitive CCDs for the SuperNova Acceleration Probe (SNAP) satellite is presented. These CCDs are fully-depleted, thick (200-300 micron), p-channel devices fabricated on high-resistivity n-type silicon. The latest generation of SNAP CCDs can be operated at high substrate voltage (>100V), reducing diffusion and improving the PSF. The improved PSF is important for the precision of shear measurements for the SNAP weak lensing survey. New measurements of diffusion using a "virtual knife edge" technique are presented that verify the predicted improvement, achieving an rms diffusion of 4 microns. In addition, new results on device performance after irradiation with protons and gamma rays are presented. The application of the CCDs designed for the SNAP satellite to ground-based astronomy is also described.
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Bulletin of the American Astronomical Society, 37 #4
© 2005. The American Astronomical Soceity.